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| Brand Name: | PDFY |
| Model Number: | PD-MO039A |
| MOQ: | 1 piece |
| Price: | Negotiable |
| Payment Terms: | T/T, PayPal |
Power amplifier 700-800MHZ 720-820MHZ 740-850MHZ 900-1000MHZ 900-1100MHZ gsm bluetooth anti drone jammer module
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Frequency and power can be customized!
|
|
--We are experienced at anti drone module, anti drone system, drone detector antenna. Customized frequency and output power.
--GaN enables high efficiency and high output. The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module.
GaN transistors are more efficient.
The efficiency minus the driver (heating power consumption) is about 55-65%.
In fact, the working efficiency over 2.4G is 52%, and the working efficiency below 2.4G is 55%.
However, the working efficiency of LDMOS modules is only 45%-55%, so GaN modules consume less power and generate heat slowly.
--We provide broadband and band specific, high power RF and microwave amplifier solutions to OEM systems designers and end users who build on the performance of our units for their own solutions in electronic warfare, / avionics, communications, and product testing applications.
-The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module.
|
|
|
|
|
| Brand Name: | PDFY |
| Model Number: | PD-MO039A |
| MOQ: | 1 piece |
| Price: | Negotiable |
| Payment Terms: | T/T, PayPal |
Power amplifier 700-800MHZ 720-820MHZ 740-850MHZ 900-1000MHZ 900-1100MHZ gsm bluetooth anti drone jammer module
|
Frequency and power can be customized!
|
|
--We are experienced at anti drone module, anti drone system, drone detector antenna. Customized frequency and output power.
--GaN enables high efficiency and high output. The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module.
GaN transistors are more efficient.
The efficiency minus the driver (heating power consumption) is about 55-65%.
In fact, the working efficiency over 2.4G is 52%, and the working efficiency below 2.4G is 55%.
However, the working efficiency of LDMOS modules is only 45%-55%, so GaN modules consume less power and generate heat slowly.
--We provide broadband and band specific, high power RF and microwave amplifier solutions to OEM systems designers and end users who build on the performance of our units for their own solutions in electronic warfare, / avionics, communications, and product testing applications.
-The radio frequency and monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module.
|
|
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